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-ray irradiationAmbai, Hiromu; Nishizuka, Yusuke*; Sano, Yuichi; Uchida, Naoki; Iijima, Shizuka
QST-M-2; QST Takasaki Annual Report 2015, P. 90, 2017/03
The spent fuel stored in the storage pools at the Fukushima Daiichi Nuclear Power Plant of Tokyo Electric Power Company Holdings, Inc. is exposed with the environment containing seawater components, owing to the injection of seawater into the storage pools. Therefore, during reprocessing, it is expected that the spent fuel will be contaminated with seawater components, and the influence of seawater on reprocessing needs to be investigated. We conducted the corrosion tests of the HAW storage tanks under -ray irradiation, and revealed that no significant effect of seawater components was emerged.
Kinoshita, Akimasa*; Iwami, Motohiro*; Kobayashi, Kenichi*; Nakano, Itsuo*; Tanaka, Reisaburo*; Kamiya, Tomihiro; Oi, Akihiko; Oshima, Takeshi; Fukushima, Yasutaka*
Nuclear Instruments and Methods in Physics Research A, 541(1-2), p.213 - 220, 2005/04
Times Cited Count：27 Percentile：84.86(Instruments & Instrumentation)no abstracts in English
-ray irradiation experiments of collimator key components for the 3GeV-RCS of J-PARCKinsho, Michikazu; Ogiwara, Norio; Masukawa, Fumihiro; Takeda, Osamu; Yamamoto, Kazami; Kusano, Joichi
Proceedings of 2005 Particle Accelerator Conference (PAC '05) (CD-ROM), p.1309 - 1311, 2005/00
It was success to develop the radiation resistant components using for beam collimator. Turbo molecular pump could be operated more than 15 MGy of ray irradiation dose. Stepping motor developed at JAERI could be operated with good performance in the ray dose of more than 70 MGy. PEEK sheathed cables and connector have kept good performance during ray irradiation more than the dose of 10 MGy. It was cleared that the function of the heat pipe disappeared at 30 kGy ray irradiation dose.
-ray irradiationOshima, Takeshi; Ito, Hisayoshi
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.191 - 194, 2004/10
no abstracts in English
Takeuchi, Koichiro*; Akiyama, Masatsugu*; Hirao, Toshio
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.195 - 199, 2004/10
no abstracts in English
Kinsho, Michikazu; Ogiwara, Norio; Wada, Kaoru*; Yoshida, Motoo*; Nakayasu, Tatsuo*; Yamato, Yukio*
Vacuum, 73(2), p.175 - 180, 2004/03
Times Cited Count：4 Percentile：20.54(Materials Science, Multidisciplinary)The turbo molecular pump which can be operated exposed to high radiation has been developing at JAERI and Osaka Vacuum Ltd., because it is planed to use this turbo molecular pump for the 3GeV-RCS of the J-PARC project. The goal of irradiation dose is 30 MGy because the cumulative energy dose due to radiation is approximately estimated to be on the order of 100 MGy for 30 years of the 3GeV-RCS operation. In order to know radiation damage of turbo molecular pump, gamma-ray irradiation experiment has been performed at JAERI. The turbo molecular pump could operate properly less than 3.5 MGy absorption dose under gamma-ray irradiation environment. Since the elongation of elastomer vacuum seals became small due to exposed to radiation, this radiation damage of elastomer seals causes leak. The turbo molecular pump components except the elasomer seals, for example motor coil, control sensor, and etc, have kept high performance more than 7 MGy absorption dose. The turbo molecular pump without elastomer seals has been developed and the irradiation test will be started form April.
Lee, K. K.; Oshima, Takeshi; Ito, Hisayoshi
Materials Science Forum, 433-436, p.761 - 764, 2003/08
The possibility of applying p-channel SiC MOSFET to dosimeter was investigated. The Source and Drain of SiC MOSFET was formed Al ion implantation at 800 
C and annealing at 1800 C for 1 min in Ar. The gate oxide was fabricated using pyrogenic oxidation. Al electrodes of source and drain is formed Al evaporation and sintering at 850 C for 5 min in Ar. Gamma-ray irradiation to the MOSFETs was doned at the rate of 1MR/h at room temperature. As the result, the change of threshold voltage by irradiation is explained to be K
D
, where K and n are constants.
Lee, K. K.; Oshima, Takeshi; Ito, Hisayoshi
Proceedings of 5th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, p.73 - 76, 2002/10
no abstracts in English
-ray exposure rate from short-lived fission products under criticality accident conditionsYanagisawa, Hiroshi; Ono, Akio; Aizawa, Eiju
Journal of Nuclear Science and Technology, 39(5), p.499 - 505, 2002/05
Times Cited Count：4 Percentile：29.25(Nuclear Science & Technology)no abstracts in English
Lee, K. K.; Oshima, Takeshi; Ito, Hisayoshi
Materials Science Forum, 389-393, p.1097 - 1100, 2002/05
The effect of gamma-ray irradiation on electrical characteristics of n-channel and p-chanel enhancement type 6H-SiC MOSFET was studied. The gate oxide of the MOSFETs were formed using pyrogenic condition. Gamma-ray irradiation was carried out at room temperature at 8.8 kGy(SiO
)/hour. The channel mobility and thrshold voltage for the MOSFETs were estimated from I
-V and I-V curves, respectively. The channel mobility for n-channel one does not change up to 1MGy. The channel mobility for p-channel one increases around 40 kGy and decreases above 40 kGy. This behavior is interpreted in terms of the compensation of intrinsic interface traps by the interface traps generated by irradiation. The fluctuation of thershold voltage for n-channel one by irradiation is less than 0.5V. For p-channel one, the threshold voltage decreases with increasing irradiation dose.
Oshima, Takeshi; Lee, K. K.; Oi, Akihiko; Yoshikawa, Masahito; Ito, Hisayoshi
Materials Science Forum, 389-393, p.1093 - 1096, 2002/05
Gamma-ray irradiation effects on the electrical characteristics such as threshold voltage (V
) and channel mobility (
) for 6H-SiC MOSFETs were studied.The gate oxide of the MOSFETs were annealed in hydrogen at 700 or steam at 800 in fabrication process to improve the initial electrical characteristics of the MOSFETs.As for the hydrogen-annealed MOSFETs,V was changed from 0.9V to 3.1 V by irradiation at 530kGy. decreased after irradiation above 60 kGy. As for the steam-annealed MOSFETs,V was changed from 2.7 to 3.3 V by irradiation at 530kGy. decreased above 180 kGy. This indicates that radiation resistance for the steam-annealed MOSFETs is higher than that for the hydrogen-annealed MOSFETs.
and electron irradiation pin photodiodeOnoda, Shinobu; Hirao, Toshio; Laird, J. S.; Mori, Hidenobu; Okamoto, Tsuyoshi*; Koizumi, Yoshiharu*; Ito, Hisayoshi
Proceedings of 6th European Conference on Radiation and its Effects on Components and System (RADECS 2001) (CD-ROM), 5 Pages, 2002/00
no abstracts in English
is not involved in RecA induction following irradiationNarumi, Issei; Sato, Katsuya; Kikuchi, Masahiro; Funayama, Tomoo; Yanagisawa, Tadashi*; Kobayashi, Yasuhiko; Watanabe, Hiroshi; Yamamoto, Kazuo
Journal of Bacteriology, 183(23), p.6951 - 6956, 2001/12
Times Cited Count：89 Percentile：83.76(Microbiology)The involvement of LexA in induction of RecA was investigated in . As in the wild-type strain, an increase in RecA protein synthesis following irradiation was detected in a 
disruptant, indicating that LexA is not involved in the induction of RecA in 
.
Watanabe, Koichiro*; Rokuhira, Kazuyoshi*; Matsuda, Hiroko*; Arima, Yasuhiro*; Hirata, Hiroshi*; Kume, Tamikazu; Matsuhashi, Shimpei
Nihon Dojo Hiryo Gaku Zasshi, 72(6), p.793 - 796, 2001/12
no abstracts in English
-ray irradiationOyama, Hidenori*; Hirao, Toshio; Simoen, E.*; Claeys, C.*; Onoda, Shinobu; Takami, Yasukiyo*; Ito, Hisayoshi
Physica B; Condensed Matter, 308-310, p.1185 - 1188, 2001/12
Times Cited Count：8 Percentile：44.94(Physics, Condensed Matter)no abstracts in English
and electron irradiationOyama, Hidenori*; Hirao, Toshio; Simoen, E.*; Claeys, C.*; Onoda, Shinobu*; Takami, Yasukiyo*; Ito, Hisayoshi
Physica B; Condensed Matter, 308-310, p.1226 - 1229, 2001/12
Times Cited Count：31 Percentile：79.69(Physics, Condensed Matter)no abstracts in English
-irradiation on microflora and fermentation quality of silages containing tofu cake or brewer's gainTanaka, Osamu*; Akiyama, Fumiaki*; Yamada, Akihisa*; Ando, Sada*; Uegaki, Ryuichi*; Kobayashi, Ryoei*; Kume, Tamikazu
Nihon Sochi Gakkai-Shi, 47(3), p.274 - 282, 2001/08
no abstracts in English
irradiation on microflora and fermentation quality of alfalfa, orchardgrass, maize and sorgum silageTanaka, Osamu*; Akiyama, Fumiaki*; Yamada, Akihisa*; Ando, Sada*; Uegaki, Ryuichi*; Kobayashi, Ryoei*; Kume, Tamikazu
Nihon Sochi Gakkai-Shi, 47(1), p.62 - 67, 2001/04
no abstracts in English
Co -raysIkeda, Shigetoshi*; Kasai, Noboru; *; *; Haruyama, Yasuyuki; Seguchi, Tadao
JAERI-Tech 99-005, 37 Pages, 1999/02
no abstracts in English
-rays irradiation tests of critical components for ITER (International Thermonulear Experimental Reactor) in-vessel remote handling systemObara, Kenjiro; Kakudate, Satoshi; Oka, Kiyoshi; *; *; Koizumi, Koichi; Shibanuma, Kiyoshi; Yagi, Toshiaki; Morita, Yosuke; ; et al.
JAERI-Tech 99-003, 312 Pages, 1999/02
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